A silicon sample A is doped with 1018 atoms/cm3 of Boron. Another sample B ofidentical dimensions is

A silicon sample A is doped with 1018 atoms/cm3 of Boron. Another sample B ofidentical dimensions is doped with 1018 atoms/cm3 of Phosphorus. The ratio ofelectron to hole mobility is 3. The ratio of conductivity of the sample A to B is(a) 3 (b)13(c)23(d)3245. A Silicon PN junction diode under reverse bias has depletion region of width 10Mm. The relative permittivity of Silicon, 11.7 r e = and the permittivity of free space8.85 10 12 F .o m e – = × The depletion capacitance of the diode per square meter is(a) 100 MF (b) 10 MF (c) 1 MF (d) 20 MF